Phys. Rev. Lett. 100, 013907 (2008) [4 pages]Realization of a Semiconductor-Based Cavity Soliton LaserReceived 2 July 2007; published 11 January 2008 The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.100.013907
DOI:
10.1103/PhysRevLett.100.013907
PACS:
42.65.Tg, 42.55.Px, 42.65.Pc, 42.79.Ta
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