Phys. Rev. Lett. 100, 016602 (2008) [4 pages]Giant Intrinsic Carrier Mobilities in Graphene and Its BilayerReceived 3 November 2007; published 7 January 2008 We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above ∼200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.100.016602
DOI:
10.1103/PhysRevLett.100.016602
PACS:
72.10.−d, 72.15.Lh
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