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Phys. Rev. Lett. 100, 116601 (2008) [4 pages]

Intrinsic Mobility Limit for Anisotropic Electron Transport in Alq3

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A. J. Drew1, F. L. Pratt2, J. Hoppler1, L. Schulz1, V. Malik-Kumar1, N. A. Morley3, P. Desai4, P. Shakya4, T. Kreouzis4, W. P. Gillin4, K. W. Kim1, A. Dubroka1, and R. Scheuermann5
1Département de Physique, Université de Fribourg, Ch. Du Musée 3, CH-1700 Fribourg, Switzerland
2ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, United Kingdom
3Dept. of Engineering Materials, University of Sheffield, Sheffield, S1 3JD, United Kingdom
4Dept. of Physics, Queen Mary, University of London, Mile End Road, London, E1 4NS, United Kingdom
5Paul Scherrer Institut, PSI-Villigen, Switzerland

Received 20 December 2007; published 17 March 2008

Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq3 (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin relaxation corresponds to that expected for highly anisotropic intermolecular electron hopping. Intermolecular mobility in the fast hopping direction has been found to be 0.23±0.03  cm2 V-1 s-1 in the absence of an electric- field gradient, increasing to 0.32±0.06  cm2 V-1 s-1 in an electric field gradient of 1  MV m-1. These intrinsic mobility values provide an estimate of the upper limit for mobility achievable in bulk material.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.100.116601
DOI:
10.1103/PhysRevLett.100.116601
PACS:
72.20.Ee, 72.20.Jv, 72.80.Le, 76.75.+i