Phys. Rev. Lett. 100, 155901 (2008) [4 pages]Mechanism of Boron Diffusion in Amorphous SiliconReceived 17 December 2007; published 15 April 2008 We have elucidated the mechanism for B migration in the amorphous (a-) Si network. B diffusivity in a-Si is much higher than in crystalline Si; it is transient and increases with B concentration up to 2×1020 B/cm3. At higher density, B atoms in a-Si quickly precipitate. B diffusion is indirect, mediated by dangling bonds (DB) present in a-Si. The density of DB is enhanced by B accommodation in the a-Si network and decreases because of a-Si relaxation. Accurate data simulations allow one to extract the DB diffusivity, whose activation energy is 2.6 eV. Implications of these results are discussed. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.100.155901
DOI:
10.1103/PhysRevLett.100.155901
PACS:
66.30.J−, 81.05.Gc, 68.55.Ln, 85.40.Ry
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