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Phys. Rev. Lett. 100, 176804 (2008) [4 pages]

Electronic Shot Noise in Fractal Conductors

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C. W. Groth1, J. Tworzydło2, and C. W. J. Beenakker1
1Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands
2Institute of Theoretical Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

Received 13 February 2008; published 30 April 2008

By solving a master equation in the Sierpiński lattice and in a planar random-resistor network, we determine the scaling with size L of the shot noise power P due to elastic scattering in a fractal conductor. We find a power-law scaling PLdf-2-α, with an exponent depending on the fractal dimension df and the anomalous diffusion exponent α. This is the same scaling as the time-averaged current I̅ , which implies that the Fano factor F=P/2eI̅ is scale-independent. We obtain a value of F=1/3 for anomalous diffusion that is the same as for normal diffusion, even if there is no smallest length scale below which the normal diffusion equation holds. The fact that F remains fixed at 1/3 as one crosses the percolation threshold in a random-resistor network may explain recent measurements of a doping-independent Fano factor in a graphene flake.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.100.176804
DOI:
10.1103/PhysRevLett.100.176804
PACS:
73.50.Td, 05.40.Ca, 64.60.ah, 64.60.al