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Phys. Rev. Lett. 100, 256404 (2008) [4 pages]

Observation of the Triplet Metastable State of Shallow Donor Pairs in AlN Crystals with a Negative-U Behavior: A High-Frequency EPR and ENDOR Study

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Sergei B. Orlinskii* and Jan Schmidt
Huygens Laboratory, Leiden University, P.O. Box 9504 2300 RA Leiden, The Netherlands

Pavel G. Baranov†
Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia

Matthias Bickermann, Boris M. Epelbaum, and Albrecht Winnacker
1Department of Materials Science 6, University of Erlangen-Nrnberg, Martensstr. 7, 91058 Erlangen, Germany

Received 10 December 2007; published 24 June 2008

Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the light of results of a high-frequency EPR an ENDOR study. It is shown that two types of effective-mass-like, shallow donors with a delocalized wave function exist in unintentionally doped AlN. The experiments demonstrate how the transformation from a shallow donor to a deep (DX) center takes place and how the deep DX center can be reconverted into a shallow donor forming a spin triplet and singlet states.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.100.256404
DOI:
10.1103/PhysRevLett.100.256404
PACS:
71.55.Eq, 76.30.−v

*Also at Federal Center of Shared Facilities of Kazan State University, 42008 Kazan, Russia.

†pavel.baranov@mail.ioffe.ru

 
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