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Phys. Rev. Lett. 100, 096803 (2008) [4 pages]

Strain-Induced Fermi Contour Anisotropy of GaAs 2D holes

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J. Shabani1, M. Shayegan1, and R. Winkler2
1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
2Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

Received 6 September 2007; published 7 March 2008

We report measurements of magnetoresistance commensurability peaks, induced by a square array of antidots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi contours of the two spin subbands that are split thanks to the spin-orbit interaction and strain. The experimental results are in quantitative agreement with the predictions of accurate energy band calculations, and reveal that the majority spin subband has a severely distorted Fermi contour whose anisotropy can be tuned with strain.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.100.096803
DOI:
10.1103/PhysRevLett.100.096803
PACS:
73.23.Ad, 71.70.Ej, 72.25.Dc