Phys. Rev. Lett. 101, 105503 (2008) [4 pages]Role of Strontium in Oxide Epitaxy on Silicon (001)Received 4 May 2008; published 4 September 2008 Epitaxial oxide-Si heterostructures, which integrate the functionality of crystalline oxides with Si technology, are made possible by a submonolayer of Sr deposited on Si (001). We find by electron diffraction studies using single termination Si wafers that this Sr submonolayer replaces the top layer of Si when deposited at 650 °C. Supported by first-principles calculations, we propose a model for the reaction dynamics of Sr on the Si surface and its effect on oxide epitaxy. This model predicts, and we experimentally confirm, an unexplored 25 °C pathway to crystalline oxide epitaxy on Si. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.105503
DOI:
10.1103/PhysRevLett.101.105503
PACS:
68.47.Fg, 61.05.jh, 71.15.Mb, 81.15.Hi
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