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APS » Journals » Phys. Rev. Lett. » Volume 101 » Issue 11
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Phys. Rev. Lett. 101, 117208 (2008) [4 pages]

Mott Relation for Anomalous Hall and Nernst Effects in Ga1-xMnxAs Ferromagnetic Semiconductors

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Yong Pu1, Daichi Chiba2, Fumihiro Matsukura2, Hideo Ohno2, and Jing Shi1
1Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
2Semiconductor Spintronics Project, ERATO-JST, Tokyo, Japan, and Laboratory of Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

Received 30 May 2008; published 12 September 2008

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.117208
DOI:
10.1103/PhysRevLett.101.117208
PACS:
75.50.Pp, 72.15.Jf, 73.50.Jt, 73.50.Lw
 
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