Phys. Rev. Lett. 101, 163202 (2008) [4 pages]Thermal Lifshitz Force between an Atom and a Conductor with a Small Density of Carriers
See accompanying Physics Synopsis A new theory describing the interaction between atoms and a conductor with small densities of current carriers is presented. The theory takes into account the penetration of the static component of the thermally fluctuating field in the conductor and generalizes the Lifshitz theory in the presence of a spatial dispersion. The equation obtained for the force describes the continuous crossover between the Lifshitz results for dielectrics and metals. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.163202
DOI:
10.1103/PhysRevLett.101.163202
PACS:
34.35.+a, 12.20.−m, 42.50.Nn
See AlsoComment: Bodo Geyer, G. L. Klimchitskaya, U. Mohideen, and V. M. Mostepanenko, Comment on “Thermal Lifshitz Force between an Atom and a Conductor with a Small Density of Carriers”, Phys. Rev. Lett. 102, 189301 (2009). Comment: R. S. Decca, E. Fischbach, B. Geyer, G. L. Klimchitskaya, D. E. Krause, D. López, U. Mohideen, and V. M. Mostepanenko, Comment on “Contribution of Drifting Carriers to the Casimir-Lifshitz and Casimir-Polder Interactions with Semiconductor Materials”, Phys. Rev. Lett. 102, 189303 (2009). See Also: Diego A. Dalvit and Steve K. Lamoreaux, Contribution of Drifting Carriers to the Casimir-Lifshitz and Casimir-Polder Interactions With Semiconductor Materials, Phys. Rev. Lett. 101, 163203 (2008). |
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