Phys. Rev. Lett. 101, 026404 (2008) [4 pages]Multiple Avalanches across the Metal-Insulator Transition of Vanadium Oxide Nanoscaled JunctionsReceived 5 March 2008; published 11 July 2008 The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.026404
DOI:
10.1103/PhysRevLett.101.026404
PACS:
71.30.+h, 64.60.an, 64.60.Ht, 72.80.Ga
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