Phys. Rev. Lett. 101, 026801 (2008) [4 pages]Epitaxial-Graphene/Graphene-Oxide Junction: An Essential Step towards Epitaxial Graphene ElectronicsReceived 5 December 2007; published 7 July 2008 Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 °C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.026801
DOI:
10.1103/PhysRevLett.101.026801
PACS:
73.63.−b, 73.40.Sx, 73.61.Ph
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