corner
corner
APS » Journals » Phys. Rev. Lett. » Volume 101 » Issue 20
< Previous Article | Next Article >

Phys. Rev. Lett. 101, 207602 (2008) [4 pages]

Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout

Download: PDF (422 kB) Buy this article Export: BibTeX or EndNote (RIS)

G. W. Morley1,*, D. R. McCamey2, H. A. Seipel2, L.-C. Brunel3,†, J. van Tol3, and C. Boehme2,‡
1London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, United Kingdom
2Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City, Utah 84112, USA
3National High Magnetic Field Laboratory at Florida State University, Tallahassee, Florida 32310, USA

Received 22 July 2008; published 14 November 2008

Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B0>8.5  T) and low temperatures (T=2.8  K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100  μs, 50 times longer than the previous maximum for electrically detected spin readout experiments.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.207602
DOI:
10.1103/PhysRevLett.101.207602
PACS:
76.30.−v, 03.67.Lx, 07.57.Pt, 61.72.uf

*g.morley@ucl.ac.uk

†Present address: Center for Terahertz Science and Technology, Department of Physics, University of California, Santa Barbara, CA 93106, USA.

‡boehme@physics.utah.edu

 
< Previous Article | Next Article >