Phys. Rev. Lett. 101, 265302 (2008) [4 pages]Spin Field Effect Transistors with Ultracold AtomsSee Also: Publisher's Note Received 9 September 2008; revised 20 October 2008; published 29 December 2008; corrected 14 September 2009 We propose a method of constructing cold atom analogs of the spintronic device known as the Datta-Das transistor (DDT), which, despite its seminal conceptual role in spintronics, has never been successfully realized with electrons. We propose two alternative schemes for an atomic DDT, both of which are based on the experimental setup for tripod stimulated Raman adiabatic passage. Both setups involve atomic beams incident on a series of laser fields mimicking the relativistic spin-orbit coupling for electrons that is the operating mechanism of the DDT. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.265302
DOI:
10.1103/PhysRevLett.101.265302
PACS:
67.85.−d, 37.10.Jk, 37.10.Vz, 85.75.Hh
See AlsoPublisher's Note: J. Y. Vaishnav, Julius Ruseckas, Charles W. Clark, and Gediminas Juzeliūnas, Publisher’s Note: Spin Field Effect Transistors with Ultracold Atoms [Phys. Rev. Lett. 101, 265302 (2008)], Phys. Rev. Lett. 103, 129902 (2009). |
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