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Phys. Rev. Lett. 101, 066801 (2008) [4 pages]

Nonadiabatic Charge Pumping in a Hybrid Single-Electron Transistor

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Dmitri V. Averin1 and Jukka P. Pekola2
1Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, New York 11794-3800, USA
2Low Temperature Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland

Received 10 February 2008; published 4 August 2008

We study theoretically current quantization in the charge turnstile based on the superconductor–normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair–electron cotunneling. The rates of these processes are calculated in the “above-the-threshold” regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10-8, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.101.066801
DOI:
10.1103/PhysRevLett.101.066801
PACS:
73.23.Hk, 74.45.+c, 84.37.+q