Phys. Rev. Lett. 102, 136808 (2009) [4 pages]High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate OxidesReceived 17 September 2008; published 2 April 2009 The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (PZT). In the electron-only regime of the FLG, μ reaches 7×104 cm2/V s at 300 K for n=2.4×1012/cm2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4×105 cm2/V s at low temperature. The temperature-dependent resistivity ρ(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D=7.8±0.5 eV. © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.136808
DOI:
10.1103/PhysRevLett.102.136808
PACS:
73.50.−h, 72.10.−d, 77.84.Dy
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