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APS » Journals » Phys. Rev. Lett. » Volume 102 » Issue 13
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Phys. Rev. Lett. 102, 137203 (2009) [4 pages]

Scaling Theory of Magnetoresistance and Carrier Localization in Ga1-xMnxAs

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C. P. Moca1,2, B. L. Sheu3, N. Samarth3, P. Schiffer3, B. Janko4,5, and G. Zarand1
1Budapest University of Technology and Economics, H-1521 Budapest, Hungary
2Department of Physics, University of Oradea, 410087 Oradea, Romania
3Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA
4Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556, USA
5Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois, 60439, USA

Received 18 May 2007; published 1 April 2009

We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.137203
DOI:
10.1103/PhysRevLett.102.137203
PACS:
75.50.Pp, 72.20.My, 72.80.Ey
 
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