Phys. Rev. Lett. 102, 187401 (2009) [4 pages]Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor
See accompanying Physics Focus We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light. © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.187401
DOI:
10.1103/PhysRevLett.102.187401
PACS:
78.20.Ls, 75.50.Pp, 75.60.−d
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