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Phys. Rev. Lett. 102, 026807 (2009) [4 pages]

Evidence for Klein Tunneling in Graphene p-n Junctions

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N. Stander, B. Huard, and D. Goldhaber-Gordon*
Department of Physics, Stanford University, Stanford, California 94305, USA

Received 13 June 2008; published 16 January 2009

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.026807
DOI:
10.1103/PhysRevLett.102.026807
PACS:
73.23.−b, 73.43.Fj, 73.63.−b

*Corresponding author.

goldhaber-gordon@stanford.edu