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APS » Journals » Phys. Rev. Lett. » Volume 102 » Issue 20
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Phys. Rev. Lett. 102, 207401 (2009) [4 pages]

Beating of Exciton-Dressed States in a Single Semiconductor InGaAs/GaAs Quantum Dot

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S. J. Boyle, A. J. Ramsay*, A. M. Fox, and M. S. Skolnick
Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom

A. P. Heberle
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA and Sullivan Park R&D Center, Corning Incorporated, Corning, New York, 14831, USA

M. Hopkinson
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, United Kingdom

Received 8 October 2008; published 20 May 2009

We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and observe the resulting beat: a direct measurement of a Rabi oscillation in time delay rather than the usual power domain.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.207401
DOI:
10.1103/PhysRevLett.102.207401
PACS:
78.67.Hc, 42.50.Hz, 78.47.jm

*a.j.ramsay@shef.ac.uk

 
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