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Phys. Rev. Lett. 102, 046802 (2009) [4 pages]

Renormalization of Molecular Quasiparticle Levels at Metal-Molecule Interfaces: Trends across Binding Regimes

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Kristian S. Thygesen1 and Angel Rubio2
1Center for Atomic-scale Materials Design (CAMD), Department of Physics, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
2Departamento de Fisica de Materiales, Facultad de Químicas, Centro Mixto CSIC-UPV/EHU, Universidad del País Vasco, Edificio Korta, 20018 San Sebastián, Spain

Received 27 June 2008; published 27 January 2009

When an electron or a hole is added into an orbital of an adsorbed molecule the substrate electrons will rearrange in order to screen the added charge. This polarization effect reduces the electron addition and removal energies of the adsorbed molecule relative to those of the free molecule. Using a microscopic model of the metal-molecule interface, we illustrate the basic features of this renormalization mechanism through systematic GW, Hartree-Fock, and Kohn-Sham calculations for the molecular energy levels as function of the model parameters. We identify two different polarization mechanisms: (i) polarization of the metal (image charge formation) and (ii) polarization of the molecule via charge transfer across the interface. The importance of (i) and (ii) is found to increase with the metal density of states at the Fermi level and metal-molecule coupling strength, respectively.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.046802
DOI:
10.1103/PhysRevLett.102.046802
PACS:
85.65.+h, 31.70.Dk, 71.10.−w, 73.20.−r