Phys. Rev. Lett. 102, 046805 (2009) [4 pages]Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room TemperatureReceived 29 August 2008; published 27 January 2009 It is demonstrated that the silicon atom dangling bond (DB) state serves as a quantum dot. Coulomb repulsion causes DBs separated by ≲2 nm to exhibit reduced localized charge, which enables electron tunnel coupling of DBs. Scanning tunneling microscopy measurements and theoretical modeling reveal that fabrication geometry of multi-DB assemblies determines net occupation and tunnel coupling strength among dots. Electron occupation of DB assemblies can be controlled at room temperature. Electrostatic control over charge distribution within assemblies is demonstrated. © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.046805
DOI:
10.1103/PhysRevLett.102.046805
PACS:
73.63.Kv, 68.37.Ef, 73.20.At
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.