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Phys. Rev. Lett. 102, 086102 (2009) [4 pages]

Friction and Dissipation in Epitaxial Graphene Films

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T. Filleter1, J. L. McChesney2, A. Bostwick2, E. Rotenberg2, K. V. Emtsev3, Th. Seyller3, K. Horn4, and R. Bennewitz1,5,*
1Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada
2Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
3Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
4Department of Molecular Physics, Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin, Germany
5INM—Leibniz Institute for New Materials, 66123 Saarbrücken, Germany

Received 27 November 2008; published 27 February 2009

See accompanying Physics Synopsis

We have studied friction and dissipation in single and bilayer graphene films grown epitaxially on SiC. The friction on SiC is greatly reduced by a single layer of graphene and reduced by another factor of 2 on bilayer graphene. The friction contrast between single and bilayer graphene arises from a dramatic difference in electron-phonon coupling, which we discovered by means of angle-resolved photoemission spectroscopy. Bilayer graphene as a lubricant outperforms even graphite due to reduced adhesion.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.102.086102
DOI:
10.1103/PhysRevLett.102.086102
PACS:
68.35.Af, 62.20.Qp, 68.37.Ps

*roland.bennewitz@inm-gmbh.de