Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits

We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies the ground state of either one dot or the other. Applying microwave radiation, we resonantly drive transitions between states and noninvasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency while varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.