Phys. Rev. Lett. 103, 216601 (2009) [4 pages]Electric-Field-Enhanced Neutralization of Deep Centers in GaAsReceived 15 August 2009; published 17 November 2009 The charge dynamics of hydrogenlike centers in semi-insulating GaAs have been studied by muon spin resonance in the presence of electric field and RF excitation. Electric-field-enhanced neutralization of deep electron and hole traps by track-induced hot carriers results in an increase of the excess electron’s or hole’s lifetimes. Similar processes may take place in semiconductor devices working at high voltages and/or under irradiation. As a consequence of the deep traps neutralization, the muonium (μ++e-) center can capture a hole. © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.103.216601
DOI:
10.1103/PhysRevLett.103.216601
PACS:
72.20.Jv, 71.55.Eq, 76.75.+i
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