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APS » Journals » Phys. Rev. Lett. » Volume 103 » Issue 25
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Phys. Rev. Lett. 103, 255501 (2009) [4 pages]

Interstitial-Mediated Diffusion in Germanium under Proton Irradiation

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H. Bracht1,*, S. Schneider1, J. N. Klug2, C. Y. Liao3, J. Lundsgaard Hansen4, E. E. Haller3, A. Nylandsted Larsen4, D. Bougeard5, M. Posselt6, and C. Wündisch6
1Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germany
2RUBION, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum, Germany
3MS&E Department, University of California at Berkeley, and Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
4Department of Physics and Astronomy, Aarhus University, Ny Munkegade, DK-8000 Aarhus, Denmark
5Walter Schottky Institute, Technical University of Munich, Am Coulombwall 3, D-85748 Garching, Germany
6Forschungszentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, D-01314 Dresden, Germany

Received 26 August 2009; published 16 December 2009

We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B and retarded diffusion of P demonstrates that an interstitial-mediated diffusion process dominates in Ge under irradiation. This fundamental finding opens up unique ways to suppress vacancy-mediated diffusion in Ge and to solve the donor deactivation problem that hinders the fabrication of Ge-based nanoelectronic devices.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.103.255501
DOI:
10.1103/PhysRevLett.103.255501
PACS:
61.80.Jh, 61.72.jj, 61.82.Fk, 81.40.Wx

*Corresponding author.

bracht@uni-muenster.de

 
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