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Phys. Rev. Lett. 104, 177003 (2010) [4 pages]

Interplay between Static and Dynamic Properties of Semifluxons in YBa2Cu3O7-δ 0-π Josephson Junctions

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K. Cedergren1, J. R. Kirtley2, T. Bauch1, G. Rotoli3, A. Troeman4, H. Hilgenkamp4, F. Tafuri5, and F. Lombardi1
1Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Göteborg, Sweden
2Center for Probing the Nanoscale, Stanford University, Stanford, California 94304, USA
3CNISM and DIMEG, Università di L’Aquila, Località Monteluco, 67040 L’Aquila, Italy
4Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Post Office Box 217, 7500 AE Enschede, The Netherlands
5Dipartimento Ingegneria dell’Informazione, Seconda Università di Napoli e CNR-SPIN, Aversa (CE), Italy

Received 18 November 2009; published 28 April 2010

We have investigated the static and dynamic properties of long YBa2Cu3O7-δ 0-π Josephson junctions and compared them with those of conventional 0 junctions. Scanning SQUID microscope imaging has revealed the presence of a semifluxon at the phase discontinuity point in 0-π Josephson junctions. Zero field steps have been detected in the current-voltage characteristics of all junctions. Comparison with simulation allows us to attribute these steps to fluxons traveling in the junction for conventional 0 junctions and to fluxon-semifluxon interactions in the case of 0-π Josephson junctions.

© 2010 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.104.177003
DOI:
10.1103/PhysRevLett.104.177003
PACS:
85.25.Cp
 
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