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Phys. Rev. Lett. 104, 066802 (2010) [4 pages]

Quantum-Well-Induced Giant Spin-Orbit Splitting

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S. Mathias1,2,*, A. Ruffing1, F. Deicke1, M. Wiesenmayer3, I. Sakar1, G. Bihlmayer4, E. V. Chulkov5, Yu. M. Koroteev6, P. M. Echenique5, M. Bauer3, and M. Aeschlimann1
1Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, 67663 Kaiserslautern, Germany
2JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440, USA
3Institut für Experimentelle und Angewandte Physik, Universität Kiel, 24098 Kiel, Germany
4Institut für Festkörperforschung and Institute for Advanced Simulation, Forschungszentrum Jülich, D-52425 Jülich, Germany
5Donostia International Physics Center (DIPC), and CFM, Centro Mixto CSIC-UPV/EHU, Departamento de Física de Materiales, UPV/EHU, Apartado 1072, 20080 San Sebastián, Spain
6Institute of Strength Physics and Materials Science, RAS, 634021, Tomsk, Russia

Received 30 September 2009; published 8 February 2010

We report on the observation of a giant spin-orbit splitting of quantum-well states in the unoccupied electronic structure of a Bi monolayer on Cu(111). Up to now, Rashba-type splittings of this size have been reported exclusively for surface states in a partial band gap. With these quantum-well states we have experimentally identified a second class of states that show a huge spin-orbit splitting. First-principles electronic structure calculations show that the origin of the spin-orbit splitting is due to the perpendicular potential at the surface and interface of the ultrathin Bi film. This finding allows for the direct possibility to tailor spin-orbit splitting by means of thin-film nanofabrication.

© 2010 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.104.066802
DOI:
10.1103/PhysRevLett.104.066802
PACS:
73.21.Fg, 71.70.Ej, 79.60.Dp

*Corresponding author.

smathias@jila.colorado.edu