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APS » Journals » Phys. Rev. Lett. » Volume 104 » Issue 6
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Phys. Rev. Lett. 104, 067405 (2010) [4 pages]

Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

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F. Ding1,2,3,*, R. Singh3, J. D. Plumhof1, T. Zander3, V. Křápek1, Y. H. Chen2, M. Benyoucef1, V. Zwiller4, K. Dörr5, G. Bester3,†, A. Rastelli1,‡, and O. G. Schmidt1
1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
4Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
5Institute for Metallic Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany

Received 3 November 2009; published 12 February 2010

We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed “time reordering” scheme.

© 2010 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.104.067405
DOI:
10.1103/PhysRevLett.104.067405
PACS:
78.67.Hc, 78.20.hb, 81.05.Ea, 81.40.Tv

*f.ding@ifw-dresden.de

†g.bester@fkf.mpg.de

‡a.rastelli@ifw-dresden.de

 
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