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Phys. Rev. Lett. 106, 057204 (2011) [4 pages]

Fully Electrical Read-Write Device Out of a Ferromagnetic Semiconductor

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S. Mark, P. Dürrenfeld, K. Pappert, L. Ebel, K. Brunner, C. Gould, and L. W. Molenkamp
Physikalisches Institut (EP3) and Röntgen Center for Complex Material Systems, Am Hubland, Universität Würzburg, D-97074 Würzburg, Germany

Received 5 November 2010; published 31 January 2011

See accompanying Physics Synopsis

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to a fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and readout of the state is done by the means of the tunneling anisotropic magnetoresistance effect. This 1 bit demonstrator device can be used to design an electrically programmable memory and logic device.

© 2011 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.106.057204
DOI:
10.1103/PhysRevLett.106.057204
PACS:
75.50.Pp, 75.30.Gw, 85.75.-d
 
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