Phys. Rev. Lett. 34, 953–955 (1975)Model for the Electronic Structure of Amorphous SemiconductorsReceived 25 November 1974; published in the issue dated 14 April 1975 It is pointed out that a model which agrees well with the observed properties of semiconducting glasses is an attractive Hubbard model of localized states. Such a model has no gap for two-electron excitations but an energy gap for one-electron ones. The suggested physical model for a two-electron excitation is a new covalent bond in the structure, which is severely localized. It is also proposed that the one-electron excitation spectrum is wholly, or almost wholly, extended, and all observed gaps are identical with the mobility gap. © 1975 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.34.953
DOI:
10.1103/PhysRevLett.34.953
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