Phys. Rev. Lett. 41, 1246–1249 (1978)Segregation Effects in Cu-Implanted Si after Laser-Pulse MeltingReceived 4 August 1978; published in the issue dated 30 October 1978 Cu-implanted Si crystals were irradiated with Q-switched ruby-laser single pulses. After irradiation with energy density in excess of 1.0 J/cm2, the Cu atoms accumulate at the sample surface. Thermal annealing in the 500-800°C range casues a migration of Cu inside the specimen, in agreement with diffusion coefficient and solid solubility values. The results indicate the formation of a liquid layer induced by laser irradiation. The solid-liquid interface movement during freezing qualitatively justifies the observed surface accumulation. © 1978 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.41.1246
DOI:
10.1103/PhysRevLett.41.1246
PACS:
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