Phys. Rev. Lett. 42, 1094–1097 (1979)Surface-Barrier Formation for A1 Chemisorbed on GaAs(110)Received 29 January 1979; published in the issue dated 16 April 1979 Using a localized orbital theory, we have studied the electronic and electrical properties of A1 chemisorbed on GaAs(110). We find that both the microscopic data and the macroscopic induced barrier are fully explained by the electronic structure of a new Al-As-Ga complex on the surface. This complex results from an exchange reaction in which Al replaces the surface Ga and an unexpected structural relaxation induced by the chemisorption of the metal. © 1979 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.42.1094
DOI:
10.1103/PhysRevLett.42.1094
PACS:
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