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APS » Journals » Phys. Rev. Lett. » Volume 45 » Issue 6
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Phys. Rev. Lett. 45, 494–497 (1980)

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

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K. v. Klitzing
Physikalisches Institut der Universität Würzburg, D-8700 Würzburg, Federal Republic of Germany, and Hochfeld-Magnetlabor des Max-Planck-Instituts für Festkörperforschung, F-38042 Grenoble, France

G. Dorda
Forschungslaboratorien der Siemens AG, D-8000 München, Federal Republic of Germany

M. Pepper
Cavendish Laboratory, Cambridge CB3 OHE, United Kingdom

Received 30 May 1980; published in the issue dated 11 August 1980

Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.

© 1980 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.45.494
DOI:
10.1103/PhysRevLett.45.494
PACS:
73.25.+i, 06.20.Jr, 72.20.My, 73.40.Qv
 
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