Phys. Rev. Lett. 50, 116–119 (1983)Observation of Raman Scattering of High-Frequency Phonons by Spin StatesReceived 24 August 1982; published in the issue dated 10 January 1983 High-frequency acoustic phonons in an Al2O3 crystal at low temperature were generated at one frequency (891 GHz) by excitation of V4+ impurity ions with a far-infrared laser, and detected at another frequency (874 GHz) by fluorescence from Cr3+ ions. A strong detector signal was observed, giving evidence that inelastic phonon scattering occurred. The dependence on magnetic field and temperature indicated that the effect was due to Raman scattering of phonons by spin states. © 1983 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.50.116
DOI:
10.1103/PhysRevLett.50.116
PACS:
63.20.Kr, 78.30.Gt
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