corner
corner

Phys. Rev. Lett. 52, 1445–1448 (1984)

Strong Electric Field Heating of Conduction-Band Electrons in SiO2

Download: PDF (320 kB) Buy this article Export: BibTeX or EndNote (RIS)

T. N. Theis, D. J. DiMaria, J. R. Kirtley, and D. W. Dong*
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

Received 29 December 1983; published in the issue dated 16 April 1984

We demonstrate that average conduction-band electrons in a wide-band-gap insulator, SiO2, are heated several electronvolts above the conduction-band edge at fields of 5 to 12 MV/cm. The electronic energy distribution appears to be stabilized at these high fields by energy-loss mechanisms other than LO-phonon scattering.

© 1984 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.52.1445
DOI:
10.1103/PhysRevLett.52.1445
PACS:
72.20.Ht, 73.40.Qv, 73.40.Ty, 73.60.Hy

*Deceased.