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Phys. Rev. Lett. 53, 2173–2176 (1984)

Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

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D. A. B. Miller, D. S. Chemla, and T. C. Damen
AT&T Bell Laboratories, Holmdel, New Jersey 07733

A. C. Gossard and W. Wiegmann
AT&T Bell Laboratories, Murray Hill, New Jersey 07974

T. H. Wood and C. A. Burrus
AT&T Bell Laboratories, Crawford Hill, New Jersey 07733

Received 27 April 1984; published in the issue dated 26 November 1984

We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields > 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.

© 1984 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.53.2173
DOI:
10.1103/PhysRevLett.53.2173
PACS:
78.20.Jq, 42.80.Ks, 71.35.+z, 73.40.Lq