Phys. Rev. Lett. 54, 1543–1546 (1985)Atom Location by Axial-Electron-Channeling AnalysisReceived 27 September 1984; published in the issue dated 8 April 1985 The channeling of electrons along or between atomic rows in a crystal is used as the basis of a powerful lattice-location technique capable of analyzing small quantities of crystal impurities with high spatial resolution. We demonstrate the technique by locating Sb dopant in Si and compare the results with ion-channeling and planar-electron-channeling analysis. Delocalization corrections are required with the electron-channeling analyses. © 1985 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.54.1543
DOI:
10.1103/PhysRevLett.54.1543
PACS:
61.80.Mk, 61.70.Wp
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