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Phys. Rev. Lett. 54, 1956–1959 (1985)

Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

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D. E. Aspnes and A. A. Studna
Bell Communications Research, Inc., Murray Hill, New Jersey 07974

Received 24 August 1984; revised 1 March 1985; published in the issue dated 29 April 1985

We report the first systematic study of above—band-gap optical anisotropies in cubic semiconductors. The anisotropies are large, of the order of 1%. The dominant intrinsic contributions for (110) Si and Ge are due to surface many-body screening and bulk spatial dispersion. Extrinsic contributions from chemisorbed and physisorbed species also play important roles.

© 1985 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.54.1956
DOI:
10.1103/PhysRevLett.54.1956
PACS:
78.20.Dj, 73.20.Cw, 78.40.Fy, 81.40.Tv