Phys. Rev. Lett. 54, 2623–2626 (1985)Observation of Resonant Impurity States in Semiconductor Quantum-Well StructuresReceived 30 January 1985; published in the issue dated 17 June 1985 Resonant Raman scattering experiments on GaAs(Si doped)-AlxGa1-xAs quantum-well structures show transitions involving the ground state of the donors and narrow resonant donor states derived from higher conduction subbands. These new impurity-related features, which occur at slightly higher energies than the associated conduction intersubband excitations, have been studied as a function of power density, temperature, and well width. © 1985 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.54.2623
DOI:
10.1103/PhysRevLett.54.2623
PACS:
73.40.Lq, 71.55.Fr, 78.30.Gt
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