Phys. Rev. Lett. 54, 201–204 (1985)Long-Range Order in AlxGa1-xAsReceived 29 October 1984; published in the issue dated 21 January 1985 We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and ½,½,0 sites and Al atoms the ½,0,½ and 0,½,½ sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs. © 1985 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.54.201
DOI:
10.1103/PhysRevLett.54.201
PACS:
68.55.+b, 61.16.Di, 61.55.Hg
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