Phys. Rev. Lett. 55, 1765–1767 (1985)Direct imaging of a novel silicon surface reconstructionReceived 14 August 1985; published in the issue dated 21 October 1985 Silicon surface reconstructions are directly observed in profile by high-resolution transmission-electron microscopy. Low-energy surface facets are formed at edges by in situ annealing of a 〈110〉 thin specimen at an ambient pressure of 10-9 Torr. As well as 〈111〉, 〈100〉, and 〈110〉 reconstructed surfaces, extensive areas of flat 〈113〉 surface are found. By inspection of high-resolution images from the 〈113〉 surface a model involving one dimer per surface (1×1) unit cell is proposed, suggesting that low-energy surfaces need not be confined to high-symmetry orientations. © 1985 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.55.1765
DOI:
10.1103/PhysRevLett.55.1765
PACS:
68.20.+t, 61.16.Di
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.