Phys. Rev. Lett. 58, 1260–1263 (1987)Role of virtual gap states and defects in metal-semiconductor contactsReceived 20 November 1986; published in the issue dated 23 March 1987 Chemical trends of barrier heights reported for metal- and silicide-silicon contacts are analyzed. The data are easily explained when both virtual gap states of the complex band structure of the semiconductor and electronic levels of defects created in the semiconductor close to the interface during its formation are considered. The virtual gap states determine the barrier heights when either the defect density is low or the defects are completely charged or all neutral. © 1987 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.58.1260
DOI:
10.1103/PhysRevLett.58.1260
PACS:
73.30.+y, 73.20.-r, 73.40.Ns
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