Phys. Rev. Lett. 59, 1353–1356 (1987)Evidence for edge currents in the integral quantum Hall effectReceived 31 July 1987; published in the issue dated 21 September 1987 In high-mobility GaAs/AlxGa1-xAs heterostructures at magnetic fields below well developed integral quantum Hall effect plateaus, we have observed that the magnetoresistance is independent of the device channel width in sufficiently small channels. Additionally, the current distribution within the channel depends on the total current magnitude and direction. We interpret our observations with a model in which current flows primarily along the edges of the sample when small currents are applied. © 1987 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.59.1353
DOI:
10.1103/PhysRevLett.59.1353
PACS:
72.20.My, 73.40.Kp
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