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Phys. Rev. Lett. 62, 2853–2856 (1989)

Piezoelectric properties of III-V semiconductors from first-principles linear-response theory

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Stefano de Gironcoli
Dipartimento di Fisica Teorica, Università di Trieste, Strada Costiera 11, I-34104 Trieste, Italy

Stefano Baroni
Scuola Internazionale Superiore di Studi Avanzati (SISSA) Strada Costiera 11, I-34014 Trieste, Italy

Raffaele Resta
Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), Ecole Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland

Received 7 November 1988; published in the issue dated 12 June 1989

We present a novel ab initio approach to piezoelectricity. The piezoelectric tensor is given by the stress induced by a homogeneous electric field. The perturbation is treated self-consistently by linear response, thus avoiding both supercells and numerical differentiation. We calculate the piezoelectric constants of none III-V semiconductors: as a by-product we also provide the first systematic study of zone-center phonons, internal strain parameters, effective charges, and dielectric constants. Our results agree very well with experiments where available, and allow predictions where they are not.

© 1989 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.62.2853
DOI:
10.1103/PhysRevLett.62.2853
PACS:
77.60.+v, 71.10.+x