Phys. Rev. Lett. 63, 1849–1852 (1989)Diluted magnetic III-V semiconductorsReceived 8 August 1989; published in the issue dated 23 October 1989 A new diluted magnetic III-V semiconductor of In1-xMnxAs (x≤0.18) has been produced by molecular-beam epitaxy. Films grown at 300 °C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200 °C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps. © 1989 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.63.1849
DOI:
10.1103/PhysRevLett.63.1849
PACS:
75.50.Pp, 68.55.Bd, 73.60.Br
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