Phys. Rev. Lett. 63, 996–999 (1989)Quenching of the Hall resistance in a novel geometrySee Also: Erratum Received 21 February 1989; published in the issue dated 28 August 1989 We have observed quenching of the Hall resistance in a GaAs-AlxGa1-xAs heterostructure Hall junction containing four narrow constrictions leading into a quantum dot. Backgated junctions show quenching within a broad but finite electron density range. In contrast, junctions containing fewer constrictions show little or no quenching behavior. These results show conclusively that the nature of the junction region is crucial in producing quenching and can be explained in terms of junction scattering using Buttiker-Landauer formulas. © 1989 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.63.996
DOI:
10.1103/PhysRevLett.63.996
PACS:
72.20.My, 73.50.Jt, 73.60.Br
See AlsoErratum: A. M. Chang, T. Y. Chang, and H. U. Baranger, Erratum: Quenching of the Hall resistance in a novel geometry [Phys. Rev. Lett. 63, 996 (1989)], Phys. Rev. Lett. 63, 2695 (1989). |
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