Phys. Rev. Lett. 64, 1589–1592 (1990)Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfacesReceived 27 December 1989; published in the issue dated 26 March 1990 The Schottky barrier of Pb grown epitaxially on n-type Si(111) has been studied. Two structures can be formed, which differ only in the arrangement of the first layer of Pb and Si atoms at the interface. One, a Si(111)(7×7)-Pb structure, has a Schottky-barrier height of 0.70 eV. The other, a Si(111)(√3 × √3 )R30°-Pb structure, has a barrier height of 0.93 eV. These results emphasize the importance of the local electronic structure for Schottky-barrier formation at ordered interfaces. © 1990 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.64.1589
DOI:
10.1103/PhysRevLett.64.1589
PACS:
73.30.+y, 73.40.-c
See AlsoComment: G. Le Lay and K. Hricovini, Comment on ‘‘Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces’’, Phys. Rev. Lett. 65, 807 (1990). |
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.