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Phys. Rev. Lett. 64, 2715–2718 (1990)

Strontium-induced oxygen defect structure and hole doping in La2-xSrxCuO4

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Zhengquan Tan, M. E. Filipkowski, J. I. Budnick, E. K. Heller, D. L. Brewe, B. L. Chamberland, C. E. Bouldin, J. C. Woicik, and D. Shi
University of Connecticut, Storrs, Connecticut 06269
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Argonne National Laboratory, Argonne, Illinois 60439

Received 29 November 1989; published in the issue dated 28 May 1990

We have discovered that the apical oxygen with a 2.35-Å La-O bond length is removed when La is substituted by Sr in polycrystalline La2-xSrxCuO4 under normal preparation conditions. This apical oxygen can be partially filled by oxygen annealing. It is reasoned that a defect oxygen is trapped at an interstitial site near the Sr atom. We present evidence that this defect oxygen is intrinsic to Sr doping, independent of processing conditions. We propose that this defect oxygen serves as a mechanism for hole doping similar to that in the superconducting oxygen-rich La2CuO4+y.

© 1990 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.64.2715
DOI:
10.1103/PhysRevLett.64.2715
PACS:
74.70.Vy, 61.70.-r, 74.60.Mj

See Also

Comment: G. H. Kwei and D. E. Partin, Comment on ‘‘Strontium-induced oxygen defect structure and hole doping in La2-xSrxCuO4’’, Phys. Rev. Lett. 65, 3456 (1990).