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Phys. Rev. Lett. 64, 551–554 (1990)

Effect of surface reconstruction on stability and reactivity of Si clusters

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Efthimios Kaxiras
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Complex Systems Theory Branch, Naval Research Laboratory, Washington, D.C. 20375

Received 5 June 1989; published in the issue dated 29 January 1990

It is proposed that ‘‘magic number’’ Si clusters of intermediate size correspond to structures in which exactly all surface atoms participate in reconstructions similar to bulk-Si surfaces. Models are given for the experimentally observed stable clusters of 33 and 45 atoms, which display features similar to the 7×7 and 2×1 reconstructions of the Si(111) surface. The nature of bonding in the energy-optimized atomic geometries is revealed, through first-principles electronic structure calculations, to be covalent.

© 1990 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.64.551
DOI:
10.1103/PhysRevLett.64.551
PACS:
61.50.Lt, 36.40.+d

See Also

Comment: Brian L. Swift, Donald E. Higgs, Tapio T. Rantala, and Thomas F. George, Comment on ‘‘Effect of surface reconstruction on stability and reactivity of Si clusters’’, Phys. Rev. Lett. 66, 2686 (1991).